NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2002
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1447314